adva nced power electronics corp. 1/5 AP09N70P-A-HF-3 n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d c i dm d at t c =25c t stg j symbol value unit parameter rating continuous drain current 3 pulsed drain current 1 thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP09N70P-A-HF-3 is in the popular to-220 through-hole package g d s bv 650v simple drive requirement 100% avalanche tested drain-source voltage 6 5 0 v rthj- c maximum thermal resistance, junction-case which is widely used in commercial and industrial applications where a small pcb footprint or an attached heatsink is required. this device is well suited for use in high voltage applications such as off-line a c/dc converters . g d s to-220 (p) o rdering information d c i continuous drain curren t 3 www.a-powerusa.com fast switching performance r 0.75 w rohs-compliant, halogen-free i 9 a at t =2 5 c 9 a at t = 10 0 c 5 a 40 a p total power dissipation 156 w -55 to 150 c t operating junction temperature range -55 to 1 50 c 0.8 c /w ap09n70 p -a- hf- 3 t b rohs-compliant halogen-free to-220, shipped in tubes ?200 9 advanced power electronics corp. usa 200804084-3 e as single pulse avalanche energy 2 305 mj i ar avalanche current 9 a e ar repetitive avalanche energy 9 mj rthj- a maximum thermal resistance, junction-ambient 6 2 c /w linear derating factor 1.25 w/c gate-source voltage + 3 0 v free datasheet http:///
adva nced power electronics corp. 2/5 AP09N70P-A-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v d bv dss /d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.6 - v/c r ds(on) static drain-source on-resistance 3 v gs =10v, i d =4.5a - - 0.75 w v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =4.5a - 4.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =480v , v gs =0v - - 1 00 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge 3 i d =9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10v - 12 - nc t d(on) turn-on delay time 3 v dd =300v - 19 - ns t r rise time i d =9a - 21 - ns t d(off) turn-off delay time r g =10w , v gs =10v - 56 - ns t f fall time r d =34w -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss output capacitance v ds =25v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) v d =v g =0v , v s =1.5v - - 9 a i sm pulsed source current (body diode) 1 - - 40 a v sd forward on voltage 3 t j =25c, i s =9a, v gs =0v - - 1.5 v o j dd g as 3. pulse test - pulse width < 300s , duty cycle < 2% 1. pulse width limited by maximum junction temperature. 2. starting t =25 c , v =50v , l=6.8mh , r =25w , i =9a. reliability, function or design.
adva nced power electronics corp. 3/5 AP09N70P-A-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics vs. junction temperature fig 3. normalized bv dss fig 4. normalized on-resistance 0 2 4 6 8 10 03 69 1 2 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =25 o c 10v 6.0v 5.0v 4.5v 4.0v v g = 3 .5 v 0 2 4 6 8 10 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t c =150 o c 10v 6.0v 5.0v 4.5v 4.0v v g = 3 .5 v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d bv dss (v ) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) n o rmalize d r ds(on) i d =4.5a v g =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a ) t j = 150 o c t j = 25 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(t h) (v )
adva nced power electronics corp. 4/5 AP09N70P-A-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) 0 4 8 12 16 02 0 4 0 6 0 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) i d =9a v ds =320v v ds =400v v ds =480v 1 100 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c ( p f) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th jc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a ) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms
adva nced power electronics corp. 5/5 AP09N70P-A-HF-3 ?2009 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: to-220 product: ap09n70 p = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 09n70p ywwsss f l5 e d1 1 2 3 a voltage grade a = 650v
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